Space Radiation Effects on Sub-micrometer Pixel and High-Resolution Advanced Image Sensors

Space instruments operate in environments where electronic devices are exposed to energetic particles from the Sun, planetary radiation belts, and cosmic rays. When these particles interact with semiconductor materials such as silicon, they can displace atoms from the crystal lattice, creating defects that alter the electrical properties of the device. In CMOS image sensors, these defects may generate excess dark current or noise.

With the continuous scaling of pixel dimensions toward the sub-micrometer range, the region affected by a radiation event can extend over several pixels, potentially impacting the performance of high-resolution imaging systems. Understanding and modeling these effects is therefore essential for the design of robust image sensors for future space missions.

This PhD will experimentally study and model these physical effects to predict the performance of next-generation imaging technologies in harsh space environments.